In advanced packaging, reliable bonding between homogeneous materials, heterogeneous materials, and hybrid material systems remains a fundamental technical challenge. In addition, achieving bonding at low temperatures is critically important in order to minimize issues arising from mismatches in mechanical properties, such as coefficient of thermal expansion (CTE) mismatch, between the bonded materials.
Surface-activated bonding (SAB) based on plasma surface activation has been proposed as an effective approach to address these challenges and enables bonding at room temperature. In this paper, Professor Suga, who has conducted extensive research in the field of plasma-based surface activation, presents the developmental background and fundamental principles of SAB. The bonding mechanisms are systematically investigated through interfacial microstructural observations and complementary analytical techniques. Furthermore, the study extends to the introduction of nanometer-scale interlayers in conjunction with SAB to improve bonding performance, thereby overcoming the limited bond strength of conventional SiO₂ bonding.
Seiki Semiconductor, leveraging the surface-activated bonding (SAB) technology developed by Professor Suga, provides technical support and services for advanced packaging applications. Interested parties are welcome to contact Seiki Semiconductor for further discussion.
The relevant links to this paper are as follows:
Title：Recent progress in surface activated bonding for 3D and heterogeneous integration
Author：Tadatomo Suga
link：https://doi.org/10.35848/1347-4065/adcfab